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| STS12NH3LL N-channel 30 V - 0.008 - 12 A - SO-8 ultra low gate charge STripFETTM Power MOSFET Features Type STS12NH3LL VDSS 30 V RDS(on) <0.0105 ID 12 A Optimal RDS(on) x Qg trade-off @ 4.5 V Switching losses reduced Low input capacitance Low threshold device SO-8 Application Switching applications Description This series is based on the latest generation of ST's proprietary "STripFETTM" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It's therefore ideal for high-density converters in telecom and computer applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 12H3LL Packag SO-8 Packaging Tape & reel Order code STS12NH3LL November 2007 Rev 9 1/13 www.st.com 13 Contents STS12NH3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ............................................... 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STS12NH3LL Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS(1) VGS(2) ID ID IDM (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Operating junction temperature Storage temperature Value 30 16 18 12 7.5 48 2.7 -55 to 150 Unit V V V A A A W C PTOT TJ Tstg 1. Continuous mode 2. Guaranteed for test time 15 ms 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-amb (1) Thermal resistance Parameter Thermal resistance junction-ambient Value 47 Unit C/W 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 sec 3/13 Electrical characteristics STS12NH3LL 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 16 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 6 A VGS= 4.5 V, ID= 6 A 1 0.008 0.0105 0.010 0.013 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 5. Symbol gfs Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate Input Resistance Test conditions VDS =10 V, ID = 12 A VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 12 A VGS =4.5 V (see Figure 20) VDD=15 V, ID = 12 A VGS =4.5 V (see Figure 20) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain 1.2 nC Min. Typ. 38 965 285 38 9 3.7 3 2.5 12 Max. Unit S pF pF pF nC nC nC nC RG 0.5 1.5 2.5 4/13 STS12NH3LL Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 6 A, RG=4.7 , VGS=4.5 V (see Figure 14) Min. Typ. 15 32 18 8.5 Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12 A, VGS=0 ISD=12 A, di/dt = 100 A/s, VDD=20 V, Tj=150 C (see Figure 16) 24 17.4 1.45 Test conditions Min Typ. Max 12 48 1.3 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 s, duty cycle 1.5% 5/13 Electrical characteristics STS12NH3LL 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 STS12NH3LL Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/13 Test circuit STS12NH3LL 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 8/13 STS12NH3LL Figure 20. Gate charge waveform Id Vds Vgs Test circuit Vgs(th) Qgs1 Qgs2 Qgd 9/13 Package mechanical data STS12NH3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STS12NH3LL Package mechanical data SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 11/13 Revision history STS12NH3LL 5 Revision history Table 8. Date 22-Jun2004 03-Aug-2004 08-Mar-2005 17-Mar-2005 23-Jun-2005 30-Mar-2006 17-Apr-2007 23-Apr-2007 26-Nov-2007 Document revision history Revision 1 2 3 4 5 6 7 8 9 First release Some value change in Table 2 Complete version Ron value change (see Table 4) New Rg value on Table 5 The document has been reformatted New parameters on Table 5 and new Figure 20 Modified value on Table 2 Modified marking on Table 1 Changes 12/13 STS12NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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